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Operational Amplifier
AN1101SSM
CMOS single power supply
I Overview
AN1101SSM is an operational amplifier with a single power supply by CMOS diffusion process. It has low current-consumption compared to general purpose operational amplifier by bipolar diffusion process. 0 V to VDD is available for both input voltage and output voltage. And this IC is widely applicable to the butterydriven equipment and to many amplifier circuits which adopt small package products.
0.20
5 0.20+0.10 -0.05 4
Unit: mm
0.10 M
1.600.10 1.200.10
0.20
1
2
3
0.50 0.50 1.000.10 1.600.10
0.60 max. 0 to 0.10
I Features
* Low current-consumption: IDD = 55 A (typ.), VDD = 3 V * Operating input/output voltage range: 0 V to VDD * Small offset voltage: 0.5 mV (typ.) * Small input bias current: 1 pA (typ.) * Operating supply voltage range: 2.5 V to 5.5 V or 1.25 V to 2.75 V
0.10 1 2 3
Seating plane
5
4
SSMINI-5DA (Lead-free package)
I Applications
* Various small microelectronics
I Block Diagram
VDD 5
VIN- 4
1 VOUT
2 GND (VSS)
3 VIN+
I Pin Descriptions
Pin No. 1 2 3 4 5 Symbol VOUT GND (VSS) VIN+ VIN- VDD Output Ground, VSS (negative supply) at using two power supply Input (positive) Input (negative) Power supply Description
0.08+0.10 -0.05
Publication date: November 2001
SFB00001BEB
1
AN1101SSM
I Absolute Maximum Ratings
Parameter Supply voltage Differential input voltage Input voltage Supply current Power dissipation
*2 *1
Symbol VDD DVIN VIN IDD PD Topr Tstg
Rating 5.6 5.6 VSS to VDD 50 -30 to +85 -55 to +125
Unit V V V mA mW C C
Operating ambient temperature Storage temperature
*1
Note) 1. *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25C. *2: The value at Ta = +85C. 2. This IC is not suitable for car electrical equipment.
I Recommended Operating Range
Parameter Supply voltage Symbol VDD Range 2.5 to 5.5 1.25 to 2.75 Unit V
I Electrical Characteristics at VDD = 3.0 V, VSS = GND, Ta = 25C 2C
Parameter Input offset voltage Common-mode input voltage Open-loop gain Maximum output amplitude voltage 1 Maximum output amplitude voltage 2 Common-mode input voltage rejection ratio Supply voltage ripple rejection ratio * Supply current Symbol VIO CMVIN GV VOH VOL CMRR SVRR IDD Conditions Buffer circuit RS = 10 k, RF = 10 k f = 100 Hz RL 10 k RL 10 k VIN = 0.0 V to 3.0 V, RS = RF = 10 k VDD = 2.5 V to 5.5 V No load Min 0 60 2.90 50 55 Typ 0.5 90 2.98 0.01 65 70 55 Max 5.5 3 0.05 100 Unit mV V dB V V dB dB A
Note) * : Except for the supply voltage ripple rejection ratio (SVRR), VDD = 3 V.
* Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
Parameter Offset current Input bias current Slew rate Zero-cross frequency
Symbol IO IIO SR fT
Conditions RL 10 k AV = 1
Reference 1 1 0.35 0.8
Unit pA pA V/s MHz
2
SFB00001BEB
AN1101SSM
I Technical Data
* PD Ta curve of SSMINI-5DA
0.200 Independent IC without a heat sink Rth( j-a) = 833.3C/W
PD T a
Power dissipation PD (W)
0.150
0.120 0.100
0.050
0.000 0 25 50 75 85 100 125
* Main characteristics Supply current Supply voltage
80 70
Ambient temperature Ta (C)
Low-level output voltage Output flow-in current
1.2 Buffer circuit VDD = 3 V VIN+ = 0 V
Low-level output voltage VOL (V)
6
1.0
Supply current IDD (A)
60 50 40 30 20 10 0 2.5 3 3.5 4 4.5 5 5.5 Buffer circuit VIN+ = VDD / 2 No load
0.8
0.6
0.4
0.2
0 0 1 2 3 4 5
Supply voltage VDD (V)
Output flow-in current IO (mA)
High-level output voltage Output flow-out current
3.0 3V 2.8 2V 2.6 1V 2.4 0V 2.2 3V 2.0 1.8 1.6 0V 0 0 1 2 3 4 5 0 Buffer circuit VDD = 3 V VIN+ = 3 V 2V 1V
Slew rate SR
Buffer circuit VDD = 3 V No load
High-level output voltage VOL (V)
Input
Output
10
20
30
40
50
Output flow-out current -IO (mA) SFB00001BEB
(s)
3
AN1101SSM
I Technical Data (continued)
* Main characteristics (continued) Offset voltage Ambient temperature
3 Buffer circuit VDD = 3 V VIN+ = VDD / 2
80 70 Buffer circuit VDD = 3 V VIN+ = VDD / 2
Supply current Ambient temperature
2
Offset voltage VIO (mV)
1 0 -1 -2 -3
Supply current IDD (A)
-25
60 50 40 30 20 10 0 -50
-50
0
25
50
75
100
-25
0
25
50
75
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Voltage gain * Phase Frequency characteristics
60 50 40 VDD = 3 V AV = 40 dB No load 180 135
Voltage gain (dB)
Phase 30 Voltage gain 20
90 45 0
10 -45 0 -10 -20 100 2k
10k
100k
1M
10M
Frequency f (Hz)
I Application Circuit Example
VDD 0.1 F 5
Phase ( )
VIN- 4
1 VOUT
2 GND (VSS)
3 VIN+
4
SFB00001BEB
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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